SPN8902-N-Channel Enhancement Mode MOSFET DataSheet

DESCRIPTION
    The SPN8902 is the N-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology.
    This high density process is especially tailored to
minimize on-state resistance.
    These devices are particularly suited for low voltage
application such as cellular phone and notebook
computer power management and other battery powered
circuits, and low in-line power loss are needed in a very
small outline surface mount package.

FEATURES 
  100V/2A, RDS(ON)= 330mΩ@VGS= 10V
   High density cell design for extremely low RDS (ON)
   Exceptional on-resistance and maximum DC current capability
   SOT-223 package design

APPLICATIONS
􀁺 Power Management in Note book
􀁺 DC/DC Converter
􀁺 LCD Display inverter

( SOT-223 )

Part No.

TYPE

VDSS

VGS

VTH

IDS

RDS(Max)

PD

Package

Note

Min

Max

25°C

10V

4.5V

2.5V

1.8V

25°C

V

V

V

V

A

mΩ

mΩ

mΩ

mΩ

W

SPN8439

N

30

12

0.8

1.6

5.8

42

54

2.8

SOT-223

SPN8457

N

30

20

1

3

5.8

58

98

2.8

SOT-223

SPN8902

N

100

20

1

2.5

2.2

330

350

2.8

SOT-223