SPC4516B-N&P Pair Enhancement Mode MOSFET DataSheet
DESCRIPTION APPLICATIONS The SPC4516B is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed.
FEATURES N-Channel 30V/8.5A,RDS(ON)= 17mΩ@VGS= 10V 30V/7.8A,RDS(ON)= 20mΩ@VGS= 4.5V P-Channel -30V/-8.2A,RDS(ON)= 24mΩ@VGS=- 10V -30V/-7.2A,RDS(ON)= 30mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOP – 8P package design
APPLICATIONS Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter
|