SPP6307-ESD Dual P-Channel Enhancement Mode MOSFET DataSheet
DESCRIPTION APPLICATIONS The SPP6307is the Dual P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed.
FEATURES P-Channel -20V/0.45A,RDS(ON)= 0.65Ω@VGS=-4.5V -20V/0.35A,RDS(ON)= 0.90Ω@VGS=-2.5V -20V/0.25A,RDS(ON)= 1.5Ω@VGS=-1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-363 package design
APPLICATIONS Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter
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