SPN1423A-N-Channel Enhancement Mode MOSFET DataSheet
DESCRIPTION The SPN1423A is the N-Channel logic enhancementmode power field effect transistors are produced usinghigh cell density , DMOS trench technology. This high density process is especially tailored tominimize on-state resistance. These devices are particularly suited for low voltageapplication such as cellular phone and notebookcomputer power management and other battery poweredcircuits where high-side switching , and low in-linepower loss are needed in a very small outline surfacemount package.
FEATURES 20V/4.0A,RDS(ON)=80mΩ@VGS=4.5V 20V/3.4A,RDS(ON)=90mΩ@VGS=2.5V 20V/2.8A,RDS(ON)=110mΩ@VGS=1.8V Super high density cell design for extremely lowRDS (ON) Exceptional on-resistance and maximum DCcurrent capability SOT-353 ( SC – 70 ) package design
APPLICATIONS Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter
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