SPN2318-N-Channel Enhancement Mode MOSFET DataSheet
DESCRIPTION The SPN2318 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package.
FEATURES 40V/3.9A,RDS(ON)= 56mΩ@VGS=10V 40V/3.5A,RDS(ON)= 62mΩ@VGS=4.5V 40V/2.0A,RDS(ON)= 95 mΩ@VGS= 2.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design
APPLICATIONS Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter
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