SPN6242-N-Channel Enhancement Mode MOSFET DataSheet

DESCRIPTION
The SPN624 2is the N-Channel logic enhancement modepower field effect transistors are produced using high celldensity , DMOS trench technology.
This high density process is especially tailored tominimize on-state resistance.
These devices are particularly suited for low voltageapplication such as cellular phone and notebookcomputer power management and other battery poweredcircuits, and low in-line power loss are needed in a verysmall outline surface mount package.

FEATURES
20V/3.3A,RDS(ON)=19mΩ@VGS=4.5V
20V/2.8A,RDS(ON)=24mΩ@VGS=2.5V
20V/2.3A,RDS(ON)=32mΩ@VGS=1.8V
Super high density cell design for extremely lowRDS (ON)
Exceptional on-resistance and maximum DCcurrent capability
UDFN2x2-6L package design

APPLICATIONS
PowerManagement in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter