SPP2339-ESD P-Channel Enhancement Mode MOSFET DataSheet

DESCRIPTION
The SPP2339 is the P-Channel logic enhancement modepower field
effect transistors are produced using high celldensity , DMOS trench technology.
This high density process is especially tailored tominimize on-state resistance.
These devices are particularly suited for low voltageapplication such as cellular phone
and notebookcomputer power management and other battery poweredcircuits,
and low in-line power loss are needed in a verysmall outline surface mount package.

FEATURES
-20V/-4A,RDS(ON)=50mΩ@VGS=-4.5V
-20V/-4A,RDS(ON)=65mΩ@VGS=-2.5V
-20V/-2.3A,RDS(ON)=120mΩ@VGS=-1.8V
Super high density cell design for extremely lowRDS (ON)
Exceptional on-resistance and maximum DCcurrent capability
SOT-23package design

APPLICATIONS
PowerManagement in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter