SPN125T10-N-Channel Enhancement Mode MOSFET DataSheet

DESCRIPTION
The SPN125T10 is the N-Channel enhancement modepower field effect transistorwhich
isproduced usingsuperhighcell density DMOS trenchtechnology.
This high density process is especially tailored to minimizeon-state resistance.
These devices are particularly suitablefor synchronous rectifier application,
Motor controlpower management and other Power Tool circuits.It hasbeen
optimized for low gate charge, lowRDS(ON)and fastswitching speed.

FEATURES
100V/112A,RDS(ON)=4.2mΩ@VGS=10V
Super high density cell design for extremely lowRDS(ON)
Exceptional on-resistance and maximum DCcurrent capability
TO-220-3L/TO-220F-3L/PPAK5x6-8Lpackagedesign

APPLICATIONS
DC/DC Converter
Load Switch
SMPS SecondarySideSynchronous Rectifier
Motor Control
Power Tool