SPP1027-ESD Dual P-Channel Enhancement Mode MOSFET DataSheet

DESCRIPTION
The SPP1027 is the Dual P-Channel enhancement modepower
field effect transistors are produced using high celldensity ,
DMOS trench technology.
This high densityprocess is especially tailored to minimize
on-stateresistanceandprovide superior switching performance.
These devices are particularly suited for low voltage applications
such as notebook computer powermanagement and other
battery powered circuitswherehigh-side switching,
 low in-line power loss, andresistance totransients are needed.

FEATURES
P-Channel-30V/0.45A,RDS(ON)=0.65Ω@VGS=-4.5V
-30V/0.35A,RDS(ON)=0.90Ω@VGS=-2.5V
-30V/0.25A,RDS(ON)=1.50Ω@VGS=-1.8V
Super high density cell design for extremely lowRDS (ON)
Exceptional on-resistance and maximum DCcurrent capability
SOT-563 (SC-89-6L)package design

APPLICATIONS

Power Management in Note book

Portable Equipment

Battery Powered System

DC/DC Converter

Load Switch

DSC

LCD Display inverter