SPN180T10-N-Channel Enhancement Mode MOSFET DataSheet

DESCRIPTION
    The SPN180T10 is the N-Channel enhancement mode
power field effect transistor which is produced using super
high cell density DMOS trench technology. This high
density process is especially tailored to minimize on-state
resistance. These devices are particularly suitable for
synchronous rectifier application, Motor control power
management and other Power Tool circuits. It has been
optimized for low gate charge, low RDS(ON) and fast
switching speed.
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FEATURES
  100V/180A,RDS(ON)=3.7mΩ@VGS=10V
  High density cell design for extremely low RDS (ON)
  Exceptional on-resistance and maximum DC currentcapability
  TO-220-3L and TO-263-2Lpackage design

APPLICATIONS
 AC/DC Synchronous Rectifier
 Load Switch
 UPS
 Power Tool
 Motor Control