SPP2329-P-Channel Enhancement Mode MOSFET DataSheet

DESCRIPTION
  The SPP2329 is the P-Channel logic enhancement
mode power field effect transistor which is produced
using super high cell density DMOS trench
technology. The SPP2329 has been designed
specifically to improve the overall efficiency of
DC/DC converters using either synchronous or
conventional switching PWM controllers. It has been
optimized for low gate charge, low RDS(ON) and fast
switching speed.

FEATURES
    -150V/-1.0A,RDS(ON)=900mΩ@VGS=-10V
    -150V/-1.0A,RDS(ON)=1000mΩ@VGS=-4.5V
    High density cell design for extremely low RDS(ON)
    Exceptional on-resistance and maximum DCcurrent capability
    SOT-23-6Lpackage design

APPLICATIONS
 Powered System
 DC/DC Converter
 Load Switch