SPN100T12-N-Channel Enhancement Mode MOSFET DataSheet

DESCRIPTION
    The SPN100T12 is the N-Channel enhancement mode
power field effect transistor which is produced using
high cell density DMOS trench technology. This high
density process is especially tailored to minimize
on-state resistance. These devices are particularly
suitable for synchronous rectifier application, Motor
control power management and other Power Tool
circuits. It has been optimized for low gate charge, low
RDS(ON) and fast switching speed.

FEATURES
  120V/100A,RDS(ON)=10mΩ@VGS=10V
  Super high density cell design for extremely lowRDS (ON)
  Exceptional on-resistance and maximum DCcurrent capability
  TO-220-3L/TO-220F-3Lpackagedesign

APPLICATIONS
   DC/DC Converter
 Load Switch
 SMPS Secondary Side Synchronous Rectifier
 Power Tool
 Motor Control