SPP2325-P-Channel Enhancement Mode MOSFET DataSheet

DESCRIPTION
The SPP2325 is the P-Channel logic enhancement modepower field effect transistors are produced using high celldensity , DMOS trench technology.
This high density process is especially tailored tominimize on-state resistance.
These devices are particularly suited for low voltageapplication suchas cellular phone and notebookcomputer power management and other battery poweredcircuits, and low in-line power loss are needed in a verysmall outline surface mount package.

FEATURES
-100V/-3A,RDS(ON)=270mΩ@VGS=-10V
-100V/-1.5A,RDS(ON)=330mΩ@VGS=-4.5V
Super high density celldesign for extremely lowRDS (ON)
Exceptional on-resistance and maximum DCcurrent capability
SOT-23package design

APPLICATIONS
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter