SPN4416B-N-Channel Enhancement Mode MOSFET DataSheet
DESCRIPTION The SPN4416B is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching .
FEATURES 20V/10.0A,RDS(ON)= 12mΩ@VGS= 4.5V 20V/ 7.0A,RDS(ON)= 25mΩ@VGS= 2.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOP – 8P package design
APPLICATIONS Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter
|