SPN3456-N-Channel Enhancement Mode MOSFET DataSheet

DESCRIPTION
    The SPN3456 is the N-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application such as cellular phone and notebook
computer power management and other battery powered
circuits, and low in-line power loss are needed in a very
small outline surface mount package.

FEATURES 
 30V/6.0A,RDS(ON)= 40mΩ@VGS=10V
 30V/5.0A,RDS(ON)= 50mΩ@VGS=4.5V
 Super high density cell design for extremely low RDS (ON)
 Exceptional on-resistance and maximum DC current capability
 TSOP-6P package design

APPLICATIONS
  Power Management in Note book
  Portable Equipment
  Battery Powered System
  DC/DC Converter
  Load Switch
  DSC
  LCD Display inverter