SPN9926B-Dual N-Channel Enhancement Mode MOSFET

SPN9926B-Dual N-Channel Enhancement Mode MOSFET DataSheet

DESCRIPTION
   The SPN9926B is the Dual N-Channel logic enhancement
mode power field effect transistors are produced using
high cell density , DMOS trench technology.
    This high density process is especially tailored to
minimize on-state resistance.
    These devices are particularly suited for low voltage
application , notebook computer power management and
other battery powered circuits where high-side
switching .

FEATURES
20V/6.0A,RDS(ON)=33mΩ@VGS=4.5V
20V/5.0A,RDS(ON)=38mΩ@VGS=2.5V
Super high density cell design for extremely lowRDS (ON)
Exceptional on-resistance and maximum DCcurrent capability
SOP – 8P package design

APPLICATIONS
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter