SPN4546-N-Channel Enhancement Mode MOSFET DataSheet

DESCRIPTION
    The SPN4546 is the N-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology.
    This high density process is especially tailored to
minimize on-state resistance.
    These devices are particularly suited for low voltage
application , notebook computer power management and
other battery powered circuits where high-side
switching .

FEATURES
40V/6.0A,RDS(ON)= 48 mΩ@VGS= 10V
40V/5.0A,RDS(ON)= 55 mΩ@VGS= 4.5V
40V/4.5A,RDS(ON)= 80 mΩ@VGS= 2.5V
Super high density cell design for extremely lowRDS (ON)
Exceptional on-resistance and maximum DCcurrent capability
SOP – 8P package design

APPLICATIONS
􀁺 Power Management in Note book
􀁺 Portable Equipment
􀁺 Battery Powered System
􀁺 DC/DC Converter
􀁺 Load Switch
􀁺 DSC
􀁺 LCD Display inverter