SPN4856-N-Channel Enhancement Mode MOSFET DataSheet

DESCRIPTION
The SPN4856 is the N-Channel logic enhancement modepower
field effect transistors are produced using high celldensity ,
DMOS trench technology.
This high density process is especially tailored tominimize on-state resistance.
These devices are particularly suited for low voltageapplication,
notebook computer power management andother battery
powered circuits where high-sideswitching.

FEATURES
45V/15A,RDS(ON)=12mΩ@VGS=10V
45V/15A,RDS(ON)=15mΩ@VGS=4.5V
Super high density cell design for extremely lowRDS (ON)
Exceptional on-resistance and maximum DCcurrent capability
SOP–8Ppackage design

APPLICATIONS
DC/DC Converter
Load Switch
Synchronous Buck Converter
Charger Adapter
LED Lighting