SPP8805-Dual P-Channel Enhancement Mode MOSFET DataSheet

DESCRIPTION
    The SPP8805 is the Dual P-Channel logic enhancement
mode power field effect transistors are produced using
high cell density , DMOS trench technology.
    This high density process is especially tailored to
minimize on-state resistance.
    These devices are particularly suited for low voltage
application , notebook computer power management and
other battery powered circuits where high-side
switching .

FEATURES
-20V/-7.2A,RDS(ON)=40mΩ@VGS=-4.5V
-20V/-5.2A,RDS(ON)=52mΩ@VGS=-2.5V
-20V/-3.6A,RDS(ON)=70mΩ@VGS=-1.8V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC currentcapability
TSSOP-8Ppackage design

APPLICATIONS
􀁺 Power Management in Note book
􀁺 Portable Equipment
􀁺 Battery Powered System
􀁺 DC/DC Converter
􀁺 Load Switch
􀁺 DSC
􀁺 LCD Display inverter