SPN8439-N-Channel Enhancement Mode MOSFET

SPN8439-N-Channel Enhancement Mode MOSFET DataSheet

DESCRIPTION
The SPN8439 is the N-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application such as cellular phone and notebook
computer power management and other battery powered
circuits, and low in-line power loss are needed in a very
small outline surface mount package.

FEATURES
􀂋 30V/6.2A,RDS(ON)= 42mΩ@VGS=4.5V
􀂋 30V/5.4A,RDS(ON)= 54mΩ@VGS=2.5V
􀂋 Super high density cell design for extremely low RDS (ON)
􀂋 Exceptional on-resistance and maximum DC current capability
􀂋 SOT-223 package design

APPLICATIONS
􀁺 Power Management in Note book
􀁺 DC/DC Converter
􀁺 LCD Display inverter

( SOT-223 )

Part No. TYPE VDSS VGS VTH IDS RDS(Max) PD Package Note

Min Max 25°C 10V 4.5V 2.5V 1.8V 25°C

V V V V A mΩ mΩ mΩ mΩ W

SPN8439 N 30 12 0.8 1.6 5.8 　 42 54 　 2.8 SOT-223 　

SPN8457 N 30 20 1 3 5.8 58 98 　　 2.8 SOT-223 　

SPN8902 N 100 20 1 2.5 2.2 330 350 　 2.8 SOT-223 　