SPP1307-P-Channel Enhancement Mode MOSFET(ESD)

SPP1307-ESD P-Channel Enhancement Mode MOSFET DataSheet

DESCRIPTION
The SPP1307 is the P-Channel enhancement mode powerfield effect transistors
are produced using high celldensity, DMOS trench technology.
This high densityprocess is especially tailored to minimize on-stateresistanceand
provide superior switching performance.These devices are particularly suited
for low voltageapplicationssuch as notebook computer powermanagemen
t and other battery powered circuitswherehigh-side switching, low in-line power loss,
andresistance to transients are needed.

FEATURES
P-Channel-30V/0.45A,RDS(ON)=0.65Ω@VGS=-4.5V
-30V/0.35A,RDS(ON)=0.90Ω@VGS=-2.5V
-30V/0.25A,RDS(ON)=1.50Ω@VGS=-1.8V
Super high density cell design for extremely lowRDS (ON)
Exceptional on-resistance and maximum DCcurrent capability
SOT-323(SC-70-3L)package design

APPLICATIONS
Drivers : Relays/Solenoids/Lamps/Hammers
Power Supply Converter Circuits
Load/Power Switching Cell Phones, Pagers