SPN1072-ESD N-Channel Enhancement Mode MOSFET DataSheet

DESCRIPTION
    The SPN1072 is the N-Channel enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology. This high density
process is especially tailored to minimize on-state
resistance and provide superior switching performance.
These devices are particularly suited for low voltage
applications such as notebook computer power
management and other battery powered circuits where
high-side switching , low in-line power loss, and
resistance to transients are needed.

FEATURES 
 N-Channel
20V/0.95A,RDS(ON)=380mΩ@VGS=4.5V
20V/0.75A,RDS(ON)=450mΩ@VGS=2.5V
20V/0.65A,RDS(ON)=800mΩ@VGS=1.8V
20V/0.65A,RDS(ON)=1000mΩ@VGS=1.5V
 Super high density cell design for extremely low RDS (ON)
 Exceptional on-resistance and maximum DC current capability
 SOT-723 package design

APPLICATIONS
 Power Management in Note book
 Portable Equipment
 Battery Powered System
 DC/DC Converter
 Load Switch
 DSC
 LCD Display inverter

( SOT-723 )
Part No.	TYPE	VDSS	VGS	VTH		IDS	RDS(Max)				PD	Package	Note
				Min	Max	25°C	10V	4.5V	2.5V	1.8V	25°C
		V	V	V	V	A	mΩ	mΩ	mΩ	mΩ	W
SPP1071	P	20	12	0.35	1.0	1		280	380	530	0.35	SOT-723	ESD
SPN1072	N	20	12	0.35	1	1.2		380	450	800	0.35	SOT-723	ESD
SPP1073	P	30	12	0.35	1	0.45		650	900	1.5	0.15	SOT-723