SPN2N7002K-N-Channel Enhancement Mode MOSFET(ESD)

SPN2N7002K-ESD N-Channel Enhancement Mode MOSFET DataSheet

DESCRIPTION
TheSPN2N7002KistheN-Channelenhancementmodefield effecttransistors are produced using highcell densityDMOStechnology.Theseproductshavebeen designedtominimizeon-stateresistancewhileproviderugged,reliable,andfastswitchingperformance.They canbeusedinmostapplicationsrequiringupto 640mADCandcandeliverpulsedcurrentsupto 950mA.Theseproductsareparticularlysuitedforlowvoltage,lowcurrentapplicationssuchassmallservomotorcontrol,powerMOSFETgatedrivers,andother switchingapplications.

FEATURES
60V/0.50A,RDS(ON)=3.0Ω@VGS=10V
60V/0.20A,RDS(ON)=3.5Ω@VGS=4.5V
Superhigh densitycelldesign forextremelylowRDS(ON)
Exceptionalon-resistanceandmaximumDCcurrentcapability
SOT-23 package design

APPLICATIONS
Drivers:Relays,Solenoids,Lamps,Hammers,Display,Memories,Transistors,etc.
Highsaturationcurrent capability.Direct
Logic-LevelInterface:TTL/CMOSBatteryOperatedSystems
Solid-StateRelays