SPN1380-ESD N-Channel Enhancement Mode MOSFET DataSheet

DESCRIPTION
The SPN1380 is the N-Channel enhancement modefield effect transistorsare produced using high celldensity DMOS technology. These products have beendesigned tominimize on-state resistance while providerugged, reliable,and fast switching performance. Theycan be used in mostapplications requiring up to300mA DC and can deliverpulsed currents up to800mA. These products are particularlysuited for lowvoltage, low current applications such as smallservomotor control, powerMOSFET gate drivers, and otherswitching applications.

FEATURES
50V/0.50A,RDS(ON)=1.6Ω@VGS=10V
50V/0.20A,RDS(ON)=2.5Ω@VGS=4.5V
50V/0.10A,RDS(ON)=4.5Ω@VGS=2.5V
Super high density cell design for extremely lowRDS (ON)
Exceptional on-resistance and maximum DCcurrent capability
SOT-23 package design

APPLICATIONS
Drivers: Relays, Solenoids, Lamps, Hammers,Display, Memories, Transistors, etc.
High saturation current capability. DirectLogic-Level Interface: TTL/CMOS
Battery Operated Systems
Solid-State Relays