SPN4906-Dual N-Channel Enhancement Mode MOSFET DataSheet
DESCRIPTION The SPN4906 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching .
FEATURES N-Channel 40V/6.0A,RDS(ON)= 45mΩ@VGS= 10V 40V/5.0A,RDS(ON)= 54mΩ@VGS= 4.5V 40V/4.5A,RDS(ON)= 83mΩ@VGS= 2.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOP – 8P package design
APPLICATIONS Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter
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