SPN4860-N-Channel Enhancement Mode MOSFET DataSheet

DESCRIPTION
TheSPN4860istheN-Channel logic enhancement modepower field
effect transistors are produced using high celldensity , DMOS trench technology.
This high density process is especially tailored tominimize on-state resistance.
These devices are particularly suited for low voltageapplication,notebook computer
power management andother battery powered circuits where high-sideswitching.

FEATURES
60V/20A,RDS(ON)=4.8mΩ@VGS=10V
60V/20A,RDS(ON)=6.3mΩ@VGS=4.5V
Super high density cell design for extremely lowRDS (ON)
Exceptional on-resistance and maximum DCcurrent capability
SOP–8Ppackage design

APPLICATIONS
DC/DC Converter
Load Switch
Synchronous Buck Converter
UPS
Motor Control
Power Tool