SPP3415-P-Channel Enhancement Mode MOSFET DataSheet

DESCRIPTION
 The SPP3415 is the P-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application such as cellular phone and notebook
computer power management and other battery powered
circuits where high-side switching , and low in-line
power loss are needed in a very small outline surface
mount package.

FEATURES
-20V/-3.4A,RDS(ON)=130mΩ@VGS=-4.5V
-20V/-2.4A,RDS(ON)=150mΩ@VGS=-2.5V
-20V/-1.7A,RDS(ON)=190mΩ@VGS=-1.8V
Superhigh densitycelldesign for extremelylowRDS (ON)
Exceptionalon-resistanceandmaximumDCcurrentcapability
SOT-363 (SC–70–6L)package design

APPLICATIONS

Power Management in Note book

Portable Equipment

Battery Powered System

DC/DC Converter

Load Switch

DSC

LCD Display inverter