SPN4842-N-Channel Enhancement Mode MOSFET DataSheet

DESCRIPTION
    The SPN4842 is the N-Channel logic enhancement mode
power field effect transistors are produced using high cell
density, DMOS trench technology. This high density
process is especially tailored to minimize on-state
resistance. These devices are particularly suited for low
voltage application, notebook computer power
management and other battery powered circuits where
high-side switching .
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FEATURES
 45V/13.3A,RDS(ON)= 8mΩ@VGS= 10V
 45V/13.3A,RDS(ON)= 12mΩ@VGS= 4.5V
 Super high density cell design for extremely low RDS (ON)
 Exceptional on-resistance and maximum DC current capability
 SOP – 8P package design

APPLICATIONS
 DC/DC Converter
 Load Switch
 Synchronous Buck Converter
 Charger Adapter
 LED Lighting