SPN8460-N-Channel Enhancement Mode MOSFET DataSheet

DESCRIPTION
The SPN8460 is the N-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application such as cellular phone and notebook
computer power management and other battery powered
circuits, and low in-line power loss are needed in a very
small outline surface mount package.

FEATURES
60V/2.5A,RDS(ON)=120mΩ@VGS=10V
60V/2.0A,RDS(ON)=130mΩ@VGS=4.5V
SuperhighdensitycelldesignforextremelylowRDS(ON)
Exceptionalon-resistanceandmaximumDCcurrentcapability
SOT-223packagedesign

APPLICATIONS
PowerTool
DC/DCConverter
LoadSwitch