SPN65T10-N-Channel Enhancement Mode MOSFET DataSheet

DESCRIPTION
    The SPN65T10 is the N-Channel enhancement mode
power field effect transistor which is produced using high
cell density DMOS trench technology. This high density
process is especially tailored to minimize on-state
resistance. These devices are particularly suitable for
synchronous rectifier application, notebook computer
power management and other battery powered circuits.

FEATURES 
100V/65A,RDS(ON)=14mΩ@VGS=10V
Super high density cell design for extremely low RDS (ON)
Exceptional on-resistance and maximum DC currentcapability
TO-220-3L/TO-263-2L/TO-252-2Lpackage design

APPLICATIONS
 DC/DC Converter
 Load Switch
 SMPS Secondary Side Synchronous Rectifier