SPP2323-Dual P-Channel Enhancement Mode MOSFET DataSheet

DESCRIPTION
The SPP2323 is the Dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage applications notebook computer power management and other battery powered circuits where high-side switching, low in-line power loss, and resistance to transients are needed.

FEATURES
 -20V/-3.3A,RDS(ON)=65mΩ@ VGS=-4.5V
    -20V/-2.8A,RDS(ON)=85mΩ@VGS=-2.5V
    -20V/-2.3A,RDS(ON)=130mΩ@VGS=-1.8V
 Super high density cell design for extremely low RDS (ON)
 Exceptional on-resistance and maximum DC current capability
 TDFN2x2-6L package design

APPLICATIONS
•Power Managemen tin Notebook
•Portable Equipment
•Battery Powered System
•DC/DC Converter
•Load Switch
•DSC
•LCD Display inverter