SPN2322-Dual N-Channel Enhancement Mode MOSFET DataSheet

DESCRIPTION
    The SPN2322 is the Dual N-Channel enhancement
mode power field effect transistors are produced using
high cell density , DMOS trench technology. This high
density process is especially tailored to minimize on-state
resistance and provide superior switching performance.
These devices are particularly suited for low voltage
applications such as notebook computer power
management and other battery powered circuits where
high-side switching , low in-line power loss, and
resistance to transients are needed.

FEATURES
20V/4.0A,RDS(ON)=26mΩ@VGS=4.5V
20V/3.0A,RDS(ON)=35mΩ@VGS=2.5V
20V/2.0A,RDS(ON)=50mΩ@VGS=1.8V
Super high density cell design for extremely lowRDS (ON)
Exceptional on-resistance and maximum DCcurrent capability
TDFN2X2-6Lpackage design

APPLICATIONS
•Power Managemen tin Notebook
•Portable Equipment
•Battery Powered System
•DC/DC Converter
•Load Switch
•DSC
•LCD Display inverter